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Available substrate materials include: BeO, Alumina, Aluminum Nitride, Silicon and Ferrites ISO 9001:2000 with IPC 610 certified operators and processes Polyimide, Silox and Silicon Nitride Dielectrics Gold Wrap-around Technology Gold plated Vias Polyimide, when added traditionally, allows for repeatable coupler lines & spaces as small as 0.0006" Tolerances to ± 0.00005" (1.27µm) Fine lines and spaces 0.0004"/0.0004" (10µm)
Metallization Design Guidelines Plated Through Vias TaN & NiChrome Resistors Polyimide Bridges & Dams
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Thin Film Chip Resistors

Spectrum Microwave's 68 Series (0.020" x 0.020") Thin-Film Chip Resistors, which come in values from 1 ohm to 500 kohms, offer the customer both value and quick delivery, two items which for other suppliers are not usually found together. With over 2 million resistors in stock, Spectrum Microwave can easily fill your order and get you the components you need.

Both passivated NiChrome and Tantalum-Nitride resistor versions are available in both top-contact and back-contact versions in several resistances and tolerances.

Advanced Technology 20x20 Silicon Chip Resistors

Mechanical Specifications
Substrate Silicon with 1 micron thermal oxide
Bond pad
metallization		 Gold, 100 microinches
Size 0.021 x 0.021 ± 0.002 (0.53 x 0.53 mm ± 0.05 mm)
Thickness 0.013 ± 0.003 (0.33 ± 0.07 mm)
Bond pad
dimensions		 0.004 x 0.004 minimum
(0.1 x 0.1 mm)
Protective overcoat
(passivation)		 0.6 microns SiO2
(68AL & 68BCN versions only)
Back side L apped silicon (68AL, 68ALT),
Gold (68BCN, 68BCR)
Electrical Specifications
Parameter Limit Test Conditions
Power Rating 100 mW (derated at 70°C to 0 mW @ 150°C)
Life ± 0.2% max 1000 hours @ 125°C
Noise -35 dB typ MIL-STD-202 Method 308
High Temp Exposure ± 0.2% max 100 hours at 150°C
TCR (68AL, 68BCN) 0 ± 50 ppm/°C -55°C to 125°C
TCR (68ALT, 68BCR) -100 ± 50 ppm/°C -55°C to 125°C
Operating voltage 100 VDC max  
Moisture resistance ± 0.5% max MIL-STD-202 Method 106
Thermal shock ± 0.5% max MIL-STD-202 Method 107

Advanced Technology 30x30 Silicon Chip Resistors

Mechanical Specifications
Substrate Silicon with 1 micron thermal oxide
Bond pad metalization Gold, 100 microinches
Size 0.031 x 0.031 ± 0.002
(0.78 x 0.78 mm ± 0.05 mm)
Thickness 0.013 ± 0.003 (0.33 ± 0.07 mm)
Bond pad dimensions 0.004 x 0.004 minimum (0.1 x 0.1 mm)
Protective overcoat (passivation) 0.6 microns SiO2
(61AC & 61AL versions only)
Back side Lapped silicon
Electrical Specifications
Parameter Limit Test conditions
Power Rating 200 mW (derated at 70°C to 0 mW @ 150°C)
Life ± 0.2% max 1000 hours @ 125°C
Noise -35 dB typ MIL-STD-202 Method 308
High Temp Exposure ± 0.2% max 100 hours at 150°
TCR (61AC, 61AL) 0 ± 50 ppm/°C -55°C to 125°C
TCR (61ACT) -100 ± 50 ppm/°C -55°C to 125°C
Operating voltage 100 VDC max
Moisture resistance ± 0.5% max MIL-STD-202 Method 106
Thermal shock ± 0.5% max MIL-STD-202 Method 107

Nichrome Specs (Oxidized Silicon / Electrical Data)

TCR 0 ± 50 ppm/°C max.
TCR Tracking 1 ppm/°C max.
Power Rating @ 70°C
0.040" x 0.040" 350 mW max.
0.030" x 0.030" 250 mW max.
0.020" x 0.020" 125 mW max.
Operating Voltage 200 V max.
Noise -25 dB max.
Short Time Overload (2.5 x rated power @ 25°C for 5 seconds) ± 0.02% max. ΔR/R
High Temperature Exposure ± 0.15% max. ΔR/R
(150°C, 1000hrs. in air) ± 0.06% max. ΔR/R
Thermal Shock Mil-Std-202 Method 107 Test Condition C ± 0.02% max. ΔR/R
Low Temperature Operation Mil-R-55342 Paragraph 4.7.4 ± 0.02% max. ΔR/R
Resistance Ratio Accuracy ± 0.025% max. or ± 0.1 Ω (whichever is greater)
Absolute Resistance Tolerance ± 0.1% max. or ± 0.1 Ω (whichever is greater)

Tantalum Specs (Oxidized Silicon / Electrical Data)

TCR -100 ± 50 ppm/°C max.
TCR Tracking 1 ppm/°C max.
Power Rating @ 70°C
0.040" x 0.040" 350 mW max.
0.030" x 0.030" 250 mW max.
0.020" x 0.020" 125 mW max.
Operating Voltage 200 V max.
Noise -25 dB max.
Short Time Overload (2.5 x rated power @ 25°C for 5 seconds) ± 0.02% max. ΔR/R
High Temperature Exposure ± 0.15% max. ΔR/R
(150°C, 1000hrs. in air) ± 0.10% max. ΔR/R
Thermal Shock Mil-Std-202 Method 107 Test Condition C ± 0.02% max. ΔR/R
Low Temperature Operation Mil-R-55342 Paragraph 4.7.4 ± 0.02% max. ΔR/R
Resistance Ratio Accuracy ± 0.050% max. or ± 0.1 Ω (whichever is greater)
Absolute Resistance Tolerance ± 0.1% max. or ± 0.1 Ω (whichever is greater)